The thermal conductivity of the silicon carbide substrate PK sapphire

The thermal conductivity of the silicon carbide substrate (silicon carbide thermal conductivity of 490W / (m · K)) and more than 10 times higher than that of the sapphire substrate. Sapphire is a poor conductor of heat, and the bottom of the production of the device requires the use of silver plastic solid crystal, silver plastic heat transfer performance is very poor.
Chip electrode using a silicon carbide substrate is L-type, two electrodes located in the surface and bottom of the device, the heat generated can be derived directly through the electrode; such a substrate does not require a current diffusion layer, and therefore the light is not current diffusion layer materials to absorb, but also improves the efficiency of the light. However, with respect to the sapphire substrate, silicon carbide, higher manufacturing costs, the need to reduce the costs corresponding to achieve its commercialization.