Recrystallization of silicon carbide grains in general, coarse, low toughness, but the refractoriness can significantly improve, its compressive strength, toughness, and grain size of the very wide use of this material, and in an atmosphere of silicon, far excellent corundum refractories.
At present, only the individual manufacturers, silicon carbide material deep processing, you can continue on the basis of the production of silicon carbide powder. Silicon carbide making refractories, board, brick and smelting vessel and other forms and specifications.
Press of a binding material can is divided into to silica for binding of the, clays binding of the, combination of of the three oxidation II to of aluminum combined and the a silicon nitride of the. Silicon carbide is a wear-resistant, corrosion-resistant and high temperature materials, in a non-oxidizing atmosphere, the temperature up to 2200 ° C, is still up to 1600 ° C under oxidizing conditions, but because of the refractoriness of the bonding material is low, resulting in silicon carbide refractoriness of the products reduced, such as: silicon nitride bonded silicon carbide decomposed at 1350 ℃.
So self-bonded silicon carbide, you can have a high refractoriness. Its basic principle is the beta crystalline form of the alpha crystalline form of silicon carbide in high temperature conditions, so that occurrence of crystal transition, it is also known as the recrystallization of silicon carbide.
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